| 1. | The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially . besides , when the insb buffer layer thickness became 80nm , the roughness of insb epilayer increased . the initial stage of insb growth on gaas substrate is
透射电子显微镜发现,在insb / gaas薄膜的界面处分布有间距为3 . 5nm的失配位错阵列,界面处的高密度位错可体现出类似深能级施主的特性,尤其在低温下对载流子散射更加显著。 |
